US PATENT SUBCLASS 257 / 62
.~.~ With impurity other than hydrogen to passivate dangling bonds (e.g., halide)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
62.~.~ With impurity other than hydrogen to passivate dangling bonds (e.g., halide)

DEFINITION

Classification: 257/62

With impurity other than hydrogen to passivate dangling bonds (e.g., halide):

(under subclass 52) Subject matter wherein the semiconductor active junction amorphous field effect device is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material.