US PATENT SUBCLASS 257 / 63
.~.~ Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
63.~.~ Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy)

DEFINITION

Classification: 257/63

Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy):

(under subclass 52) Subject matter wherein the amorphous semiconductor material is an alloy or contains material to change the energy gap between the valence and conduction bands.

SEE OR SEARCH THIS CLASS, SUBCLASS:

55, for this subject matter in a device which is responsive to nonelectrical external signals.