US PATENT SUBCLASS 257 / 57
.~.~ Field effect device in amorphous semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
57.~.~ Field effect device in amorphous semiconductor material {4}
58  DF  .~.~.~> With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
59  DF  .~.~.~> In array having structure for use as imager or display, or with transparent electrode
60  DF  .~.~.~> With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path)
61  DF  .~.~.~> With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain)

DEFINITION

Classification: 257/57

Field effect device in amorphous semiconductor material:

(under subclass 52) Subject matter wherein the amorphous semiconductor active junction is a field effect device, i.e., one which has a conducting channel and two or more electrodes, one of which is denoted a source and the other a drain electrode, and in which the current through the conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof.

(1) Note. See illustration under subclass 213 for various field effect devices.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

149+, for methods of forming a field effect transistor on an insulating substrate or layer (e.g., SOS, SOI, etc.).