US PATENT SUBCLASS 257 / 60
.~.~.~ With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
57  DF  .~.~ Field effect device in amorphous semiconductor material {4}
60.~.~.~ With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path)

DEFINITION

Classification: 257/60

With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path):

(under subclass 57) Subject matter wherein the semiconductor active junction amorphous field effect device has an electrode located under or on a side edge of the device to affect the current path through the device (e.g., providing a vertical current path).