US PATENT SUBCLASS 257 / 59
.~.~.~ In array having structure for use as imager or display, or with transparent electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
57  DF  .~.~ Field effect device in amorphous semiconductor material {4}
59.~.~.~ In array having structure for use as imager or display, or with transparent electrode

DEFINITION

Classification: 257/59

In array having structure for use as imager or display, or with transparent electrode:

(under subclass 57) Subject matter wherein a plurality of semiconductor active junction amorphous field effect devices are interconnected in a monolithic chip device for generating an image of an object, light from which is incident on the device, or for displaying signals applied to the device, or having an electrode that transmits optical radiation in the infrared, visible, or ultraviolet wavelength bands.