US PATENT SUBCLASS 257 / 58
.~.~.~ With impurity other than hydrogen to passivate dangling bonds (e.g., halide)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
57  DF  .~.~ Field effect device in amorphous semiconductor material {4}
58.~.~.~ With impurity other than hydrogen to passivate dangling bonds (e.g., halide)

DEFINITION

Classification: 257/58

With impurity other than hydrogen to passivate dangling bonds (e.g., halide):

(under subclass 57) Subject matter wherein the semiconductor active junction amorphous field effect device is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material.