US PATENT SUBCLASS 257 / 61
.~.~.~ With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
57  DF  .~.~ Field effect device in amorphous semiconductor material {4}
61.~.~.~ With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain)

DEFINITION

Classification: 257/61

With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain):

(under subclass 57) Subject matter wherein the semiconductor active junction amorphous field effect device has regions in contact with the amorphous material which contain dopant ions with relatively heavy concentrations (e.g., 10[supscrpt]18[end supscrpt] to 10[supscrpt]21[end supscrpt] dopant atoms per cubic centimeter).