US PATENT SUBCLASS 257 / 76
SPECIFIED WIDE BAND GAP (> 1.5eV) SEMICONDUCTOR MATERIAL OTHER THAN GaAsP OR GaAlAs

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

76SPECIFIED WIDE BAND GAP (> 1.5eV) SEMICONDUCTOR MATERIAL OTHER THAN GaAsP OR GaAlAs {2}
77  DF  .~> Diamond or Silicon Carbide
78  DF  .~> II-IV compound

DEFINITION

Classification: 257/76

SPECIFIED WIDE BAND GAP (1.5eV) SEMICONDUCTOR MATERIAL OTHER THAN GaAsP or GaAlAs:

(under the class definition) Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.