| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
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| 499 | DF | INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9} |
| 506 | DF | .~ Including dielectric isolation means {7} |
| 509 | DF | .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1} |
| 510 |  | .~.~.~ Dielectric in groove {8} |
| 511 | DF | .~.~.~.~> With complementary (npn and pnp) bipolar transistor structures) {1} |
| 513 | DF | .~.~.~.~> Vertical walled groove {1} |
| 515 | DF | .~.~.~.~> With active junction abutting groove (e.g., "walled emitter") |
| 516 | DF | .~.~.~.~> With passive component (e.g., resistor, capacitor, etc.) |
| 517 | DF | .~.~.~.~> With bipolar transistor structure {1} |
| 519 | DF | .~.~.~.~> Including heavily doped channel stop region adjacent groove |
| 520 | DF | .~.~.~.~> Conductive filling in dielectric-lined groove (e.g., polysilicon backfill) |
| 521 | DF | .~.~.~.~> Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.) |