| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
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| 499 | DF | INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9} |
| 506 |  | .~ Including dielectric isolation means {7} |
| 507 | DF | .~.~> With single crystal insulating substrate (e.g., sapphire) |
| 508 | DF | .~.~> With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer) |
| 509 | DF | .~.~> Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1} |
| 522 | DF | .~.~> Air isolation (e.g., beam lead supported semiconductor islands) |
| 523 | DF | .~.~> Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment) |
| 524 | DF | .~.~> Full dielectric isolation with polycrystalline semiconductor substrate {1} |
| 526 | DF | .~.~> With bipolar transistor structure {1} |