US PATENT SUBCLASS 257 / 508-- .~.~ With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)

US PATENT SUBCLASS 257 / 508
.~.~ With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499	DF	INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506	DF	.~ Including dielectric isolation means {7}
508		.~.~ With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)

DEFINITION

Classification: 257/508

With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer):

(under subclass 506) Subject matter wherein a metallic (metal or metal-like) conductor is located within the region of electrical insulator material which isolates the components on the chip from each other or is provided between the single crystal semiconductor material of the semiconductor components and the electrical insulator material forming the dielectric isolation.

(1) Note. The metallic conductor may be used to provide interconnections between components on the chip or as an electrical shielding layer.