US PATENT SUBCLASS 257 / 526
.~.~ With bipolar transistor structure


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
526.~.~ With bipolar transistor structure {1}
527  DF  .~.~.~> Sides of isolated semiconductor islands along major crystal planes (e.g., (111), (100) planes, etc.)


DEFINITION

Classification: 257/526

With bipolar transistor structure:

(under subclass 524) Subject matter wherein the device includes at least one bipolar transistor structure.