US PATENT SUBCLASS 257 / 523
.~.~ Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
523.~.~ Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)

DEFINITION

Classification: 257/523

Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment):

(under subclass 506) Subject matter wherein the electrical insulator material which provides the dielectric isolation includes a region of intrinsic (undoped) semiconductor material, with resulting high resistivity.

(1) Note. The isolation region may contain a region which has been physically damaged by proton bombardment or by other means.