US PATENT SUBCLASS 257 / 507
.~.~ With single crystal insulating substrate (e.g., sapphire)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
507.~.~ With single crystal insulating substrate (e.g., sapphire)

DEFINITION

Classification: 257/507

With single crystal insulating substrate (e.g., sapphire):

(under subclass 506) Subject matter wherein the means to electrically isolate different devices from each other includes a substrate of single crystal insulating material, upon which the semiconductor material of the active devices is grown in heteroepitaxial relationship therewith.

(1) Note. The substrate may typically be the alpha crystalline phase of aluminum oxide, commonly called sapphire or single crystalline beryllium oxide or single crystal magnesium aluminate known as spinel.