US PATENT SUBCLASS 257 / 524
.~.~ Full dielectric isolation with polycrystalline semiconductor substrate

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
524.~.~ Full dielectric isolation with polycrystalline semiconductor substrate {1}
525  DF  .~.~.~> With complementary (npn and pnp) bipolar transistor structures

DEFINITION

Classification: 257/524

Full dielectric isolation with polycrystalline semiconductor substrate:

(under subclass 506) Subject matter wherein the integrated

circuit substrate is made of polycrystalline semiconductor material and the isolation means is a dielectric material which surrounds each active solid-state semiconductor device, resulting is those devices becoming islands in a sea of dielectric material.