US PATENT SUBCLASS 257 / 525
.~.~.~ With complementary (npn and pnp) bipolar transistor structures

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
524  DF  .~.~ Full dielectric isolation with polycrystalline semiconductor substrate {1}
525.~.~.~ With complementary (npn and pnp) bipolar transistor structures

DEFINITION

Classification: 257/525

With complementary (npn and pnp) bipolar transistor structures:

(under subclass 524) Subject matter wherein the device includes complementary bipolar transistors (i.e., includes both pnp and npn bipolar transistors).

(1) Note. The device may include complementary lateral bipolar transistor structures.