US PATENT SUBCLASS 257 / 511
.~.~.~.~ With complementary (npn and pnp) bipolar transistor structures)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
509  DF  .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1}
510  DF  .~.~.~ Dielectric in groove {8}
511.~.~.~.~ With complementary (npn and pnp) bipolar transistor structures) {1}
512  DF  .~.~.~.~.~> Complementary devices share common active region (e.g., integrated injection logic, I2L)

DEFINITION

Classification: 257/511

With complementary (npn and pnp) bipolar transistor structures:

(under subclass 509) Subject matter wherein the device includes, on the same monolithic chip, both pnp bipolar transistors and npn bipolar transistor structures.