US PATENT SUBCLASS 257 / 512
.~.~.~.~.~ Complementary devices share common active region (e.g., integrated injection logic, I2L)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
509  DF  .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1}
510  DF  .~.~.~ Dielectric in groove {8}
511  DF  .~.~.~.~ With complementary (npn and pnp) bipolar transistor structures) {1}
512.~.~.~.~.~ Complementary devices share common active region (e.g., integrated injection logic, I2L)

DEFINITION

Classification: 257/512

Complementary devices share common active region (e.g., integrated injection logic, I[supscrpt]2[end supscrpt]L):

(under subclass 511) Subject matter wherein the device includes structures wherein a pnp transistor shares a semiconductor region with an npn transistor, e.g., where the base region of the pnp transistor serves also as the emitter of the npn transistor and the collector of the pnp transistor serves as the base region of the npn transistor.

(1) Note. Search this class, subclass 107 for regenerative switching devices, which typically are in the form of a pnp transistor and an npn transistor, the collector and base of the pnp transistor forming the base and collector, respectively, of the npn transistor.

(2) Note. A typical structure in which pnp transistors and

npn transistors share regions in common is that called Integrated injection logic, I[supscrpt]2[end supscrpt]L (formerly alternatively called merged transistor logic, MTL), in which a pnp transistor serves to supply base region current to a multicollector npn transistor, with the base region of the npn being the logic circuit input and the multiple collectors providing logic fan out to plural further logic gates.