US PATENT SUBCLASS 257 / 517
.~.~.~.~ With bipolar transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
509  DF  .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1}
510  DF  .~.~.~ Dielectric in groove {8}
517.~.~.~.~ With bipolar transistor structure {1}
518  DF  .~.~.~.~.~> With polycrystalline connecting region (e.g., polysilicon base contact)

DEFINITION

Classification: 257/517

With bipolar transistor structure:

(under subclass 510) Subject matter wherein the device contains at least one bipolar transistor structure.