US PATENT SUBCLASS 257 / 518
.~.~.~.~.~ With polycrystalline connecting region (e.g., polysilicon base contact)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
509  DF  .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1}
510  DF  .~.~.~ Dielectric in groove {8}
517  DF  .~.~.~.~ With bipolar transistor structure {1}
518.~.~.~.~.~ With polycrystalline connecting region (e.g., polysilicon base contact)

DEFINITION

Classification: 257/518

With polycrystalline connecting region (e.g., polysilicon base contact):

(under subclass 517) Subject matter wherein the device has portions of polycrystalline (i.e., made up of many small crystals) semiconductor material serving as electrical contacts or connections.