US PATENT SUBCLASS 257 / 519
.~.~.~.~ Including heavily doped channel stop region adjacent groove

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
509  DF  .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1}
510  DF  .~.~.~ Dielectric in groove {8}
519.~.~.~.~ Including heavily doped channel stop region adjacent groove

DEFINITION

Classification: 257/519

Including heavily doped channel stop region adjacent groove:

(under subclass 510) Subject matter wherein the device has at least one heavily doped semiconductor region adjacent a dielectric filled groove to prevent formation of parasitic inversion channels in the semiconductor material.