US PATENT SUBCLASS 257 / 521
.~.~.~.~ Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
506  DF  .~ Including dielectric isolation means {7}
509  DF  .~.~ Combined with pn junction isolation (e.g., isoplanar, LOCOS) {1}
510  DF  .~.~.~ Dielectric in groove {8}
521.~.~.~.~ Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.)

DEFINITION

Classification: 257/521

Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.):

(under subclass 510) Subject matter wherein the device has grooves for the isolation whose sides are oriented along one or more major crystal planes of the semiconductor material in

which the grooves are formed.

(1) Note. Major crystal planes are considered to be the (111), (110), and (100) planes in a crystal with cubic symmetry.

(2) Note. See illustration, below. [figure]