US PATENT SUBCLASS 117 / 88
.~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88.~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
89  DF  .~.~> Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) {4}
94  DF  .~.~> With pretreatment or preparation of a base (e.g., annealing) {2}
98  DF  .~.~> With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)
99  DF  .~.~> With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes) {1}
101  DF  .~.~> Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index)
102  DF  .~.~> With significant flow manipulation or condition, other than merely specifying the components or their sequence or both
103  DF  .~.~> Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)
104  DF  .~.~> Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE)

DEFINITION

Classification: 117/88

With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD):

(under subclass 84) Subject matter in which a precursor* molecule composed of different atoms, other than an impurity or a dopant* precursor*, is involved in a decomposition chemical reaction* during the growth process.