US PATENT SUBCLASS 117 / 103
.~.~ Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88  DF  .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
103.~.~ Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)

DEFINITION

Classification: 117/103

Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser):

(under subclass 88) Subject matter in which the process utilizes a particle beam or an energy beam or a particle field or an energy field or a plasma during growth.

(1) Note. Examples of subject matter proper for this subclass are: laser, electron, chemical, or (some) molecular beams; plasma; RF, magnetic, or electric fields; or ionization.

(2) Note. Some MBE processes are proper for this subclass, however most do not involve a decomposition reaction of a precursor*.

SEE OR SEARCH THIS CLASS, SUBCLASS:

92, for similar processes in which there is also a change in a growth-influencing parameter during growth; e.g., to grow layers, junction, superlattice.

94, for processes in which the substrate is pretreated with

an energy beam or field, particle beam or field, or plasma.

108, for similar processes in which there is no chemical decomposition reaction of precursor* (e.g., most MBE processes). SEE OR SEARCH CLASS

204, Chemistry: Electrical and Wave Energy, for processes of forming a single crystal by a method set forth in that class definition and as restricted in Class 204,

157.15, (9) Note. Thus, Class 204 is proper for single crystal growth processes which involve glow discharge, plasma torch, electrolysis, electrophoresis, sputtering, or vacuum arc discharge.