US PATENT SUBCLASS 117 / 84
FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
85  DF  .~> With a step of measuring, testing, or sensing {1}
87  DF  .~> Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)
88  DF  .~> With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
105  DF  .~> Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
106  DF  .~> With pretreatment or preparation of a base (e.g., annealing)
107  DF  .~> With movement of substrate or vapor or gas supply means during growth
108  DF  .~> Using an energy beam or field, a particle beam or field, or a plasma (e.g., MBE)
109  DF  .~> Fully-sealed or vacuum-maintained chamber (e.g., ampoule)

DEFINITION

Classification: 117/84

FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION):

(under the class definition) Subject matter in which the single-crystal* is grown by depositing material directly from the vapor or gaseous state; i.e., the immediate-precursor* is in a vapor or gaseous state.

SEE OR SEARCH THIS CLASS, SUBCLASS:

11+, for processes in which the crystal grows from an immediate-precursor* in a liquid or supercritical state, even if the liquid or supercritical material (or a precursor* thereof) was present as a gas or vapor state during the process.

200+, for corresponding apparatus other than coating apparatus.

SEE OR SEARCH CLASS

118, Coating Apparatus,

715+, for corresponding VPE coating apparatus. 427, Coating Processes, for processes of depositing a coating other than single-crystal* (e.g., polycrystalline or amorphous) on a substrate, except as specifically provided for elsewhere; especially

457+, for processes of coating combined with direct application of electrical, magnetic, wave, or particle energy (e.g., subclasses 497, 509, 523+, 569+, 580, 582+, 585+, and 593), and subclasses 248.1+ for coating by vapor, gas, or smoke.

438, Semiconductor Device Manufacturing: Process, for a process consisting of a vapor of gaseous coating step of or with a semiconductor material, or for a process including a step of growing a single-crystal* of a semiconductor material which is combined with named operations or treatments, including those noted in the Class 117 definition, section I, C, Note (4).