US PATENT SUBCLASS 117 / 107
.~ With movement of substrate or vapor or gas supply means during growth

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
107.~ With movement of substrate or vapor or gas supply means during growth

DEFINITION

Classification: 117/107

With movement of substrate or vapor or gas supply means during growth:

(under subclass 84) Subject matter in which the process employed includes simultaneous growth and movement of (a) the substrate through a supply gas or vapor field or (b) the gas or vapor supply means (e.g., supply tube) relative to the substrate; e.g., rotation of substrate in the deposition chamber.

(1) Note. This subclass does not provide for merely moving a substrate from one station to another without simultaneous crystal growth.