117 / | HD | SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR |
84 | DF | FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8} |
88 | DF | .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8} |
99 | .~.~ With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes) {1} | |
100 | DF | .~.~.~> Fully-sealed or vacuum-maintained chamber (e.g., ampoule) |