US PATENT SUBCLASS 117 / 102
.~.~ With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88  DF  .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
102.~.~ With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

DEFINITION

Classification: 117/102

With significant flow manipulation or condition, other than merely specifying the components or their sequence or both:

(under subclass 88) Subject matter in which significant gas or vapor flow manipulation or condition, other than merely specifying the components of precursors* or their sequence or both, is specified.

(1) Note. Examples of subject matter proper for this subclass are: stagnant zone provided; coaxial vapor inlet described; horizontally or tangentially directed flow specified; flow through a porous medium (e.g., frit); backflow control means; laminar or turbulent flow specified; mixing order or arrangement specified (more than merely mixing); flow rates given; proportions of constituents or flows given; or specified temperature or pressure of the gas or vapor flow specified (more than specifying the temperature or pressure of the reaction chamber).

(2) Note. Not included here are claims merely reciting alternating flows or layers deposited (e.g., superlattice) absent a recitation of some significant flow manipulation or condition provided for in this subclass.

(3) Note. Cross-referencing between this subclass and subclass 99 is not necessary when based on the same step or steps.