US PATENT SUBCLASS 117 / 98
.~.~ With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88  DF  .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
98.~.~ With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)

DEFINITION

Classification: 117/98

With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation):

(under subclass 88) Subject matter in which the process employed includes simultaneous growth and movement of (a) the substrate through a vapor or gas supply field or (b) the vapor or gas supply means (e.g., supply tube) relative to the substrate (e.g., rotation of the substrate in the deposition chamber).

(1) Note. This subclass does not provide for merely moving a substrate from one station to another without simultaneous

deposition and movement.