US PATENT SUBCLASS 117 / 89
.~.~ Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88  DF  .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
89.~.~ Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) {4}
90  DF  .~.~.~> With pretreatment of substrate (e.g., coacting ablating)
91  DF  .~.~.~> With a chemical reaction (except ionization) in a disparate zone to form a precursor
92  DF  .~.~.~> Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)
93  DF  .~.~.~> With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

DEFINITION

Classification: 117/89

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing):

(under subclass 88) Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied (e.g., modulated) during growth and as a result growth is altered, usually so that distinct layers of single-crystals* are formed or so that a single-crystal* of varying internal composition is formed (e.g., superlattice).

(1) Note. Variations which occur during initiating and terminating growth are not included as changes in a growth-influencing parameter.

SEE OR SEARCH THIS CLASS, SUBCLASS:

98, for movement of substrate or vapor or gas supply means

during growth; e.g., rotation of wafer.