US PATENT SUBCLASS 117 / 91
.~.~.~ With a chemical reaction (except ionization) in a disparate zone to form a precursor

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88  DF  .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
89  DF  .~.~ Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) {4}
91.~.~.~ With a chemical reaction (except ionization) in a disparate zone to form a precursor

DEFINITION

Classification: 117/91

With a chemical reaction (except ionization) in a disparate zone to form a precursor:

(under subclass 89) Subject matter including a step of forming a precursor*, including dopant* precursor*, by a chemical reaction* (except ionization) in a location separate from the deposition zone.

(1) Note. Not included here are processes in which the precursor* undergoes chemical reaction* immediately at the deposition zone.

(2) Note. Cross-referencing between this subclass and subclass 93 is not necessary when based on the same step or steps. However, when it is unclear whether the basis of placement is based on the same step, cross-referencing is appropriate.

SEE OR SEARCH THIS CLASS, SUBCLASS:

92, for similar processes involving ionization.