US PATENT SUBCLASS 117 / 90
.~.~.~ With pretreatment of substrate (e.g., coacting ablating)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

84  DF  FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) {8}
88  DF  .~ With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) {8}
89  DF  .~.~ Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) {4}
90.~.~.~ With pretreatment of substrate (e.g., coacting ablating)

DEFINITION

Classification: 117/90

With pretreatment of substrate (e.g., coating, ablating):

(under subclass 89) Subject matter in which a substrate* is treated prior to growth.

(1) Note. Pretreatment includes: cleaning such as etching; heating (e.g., to evolve impurities); or coating, other than single-crystal* coating (e.g., masking), including when such coating is a separate layer in the final product or is removed in a subsequent step or one which is absorbed into the final product (e.g., an adherence enhancing coating).

(2) Note. Multiple single-crystal* growth processes are not proper for placement here based on one of the single-crystal* growth steps.

SEE OR SEARCH THIS CLASS, SUBCLASS:

101, for specified arrangement of or crystallos:graphic orientation of the substrate.