US Patent Class 365
STATIC INFORMATION STORAGE AND RETRIEVAL



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Current as of: June, 1999
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  DF  CLASS NOTES
1  DF  MAGNETIC BUBBLES
2  DF  .~ Disposition of elements
3  DF  .~.~ Lattice
4  DF  .~ Decoder
5  DF  .~ Logic
6  DF  .~ Rotating field circuits
7  DF  .~ Detectors
8  DF  .~.~ Magnetoresistive
9  DF  .~.~ Hall effect
10  DF  .~.~ Optical
11  DF  .~ Generators
12  DF  .~.~ By splitting
13  DF  .~ Plural interacting paths
14  DF  .~.~ Closed loop
15  DF  .~.~.~ Major-minor
16  DF  .~.~ With switch at interacting point
17  DF  .~.~.~ Idler switch
18  DF  .~.~ Boundary
19  DF  .~ Conductor propagation
20  DF  .~.~ Including A.C. signal
21  DF  .~.~ Three phase signals
22  DF  .~ One's and zero's
23  DF  .~ Plural direction propagation
24  DF  .~.~ Nonsequential
25  DF  .~ Velocity
26  DF  .~.~ Turns
27  DF  .~ Bias
28  DF  .~.~ Variable
29  DF  .~ Strip domain
30  DF  .~ In-plane field (nonrotating)
31  DF  .~ Different size bubbles
32  DF  .~ Multiple magnetic layer
33  DF  .~ Magnetic storage material
34  DF  .~.~ Amorphous
35  DF  .~ Guide structure
36  DF  .~.~ Ion implantation
37  DF  .~.~ Slots or rails
38  DF  .~.~ Zigzag
39  DF  .~.~ Overlays
40  DF  .~.~.~ On opposite sides of storage medium
41  DF  .~.~.~ Dots
42  DF  .~.~.~ Wedges
43  DF  .~.~.~ Chevrons
44  DF  .~.~.~ Rectangular bars
185.01  DF  FLOATING GATE
185.02  DF  .~ Disturbance control
185.03  DF  .~ Multiple values (e.g., analog)
185.04  DF  .~ Data security
185.05  DF  .~ Particular connection
185.06  DF  .~.~ Segregated columns
185.07  DF  .~.~ Cross-coupled cell
185.08  DF  .~.~ With volatile signal storage device
185.09  DF  .~.~ Error correction (e.g., redundancy, endurance)
185.1  DF  .~.~ Extended floating gate
185.11  DF  .~.~ Bank or block architecture
185.12  DF  .~.~.~ Parallel row lines (e.g., page mode)
185.13  DF  .~.~.~ Global word or bit lines
185.14  DF  .~.~ Program gate
185.15  DF  .~.~.~ Weak inversion injection
185.16  DF  .~.~ Virtual ground
185.17  DF  .~.~ Logic connection (e.g., NAND string)
185.18  DF  .~ Particular biasing
185.19  DF  .~.~ Multiple pulses (e.g., ramp)
185.2  DF  .~.~ Reference signal (e.g., dummy cell)
185.21  DF  .~.~.~ Sensing circuitry (e.g., current mirror)
185.22  DF  .~.~.~ Verify signal
185.23  DF  .~.~ Drive circuitry (e.g., word line driver)
185.24  DF  .~.~ Threshold setting (e.g., conditioning)
185.25  DF  .~.~ Line charging (e.g., precharge, discharge, refresh)
185.26  DF  .~.~ Floating electrode (e.g., source, control gate, drain)
185.27  DF  .~.~ Substrate bias
185.28  DF  .~.~ Tunnel programming
185.29  DF  .~.~ Erase
185.3  DF  .~.~.~ Over erasure
185.31  DF  .~.~.~ Nonsubstrate discharge
185.32  DF  .~.~.~.~ Radiation erasure
185.33  DF  .~.~.~ Flash
45  DF  ANALOG STORAGE SYSTEMS
46  DF  .~ Resistive
47  DF  .~ Thermoplastic
48  DF  .~ Magnetic
49  DF  ASSOCIATIVE MEMORIES
50  DF  .~ Magnetic
51  DF  FORMAT OR DISPOSITION OF ELEMENTS
52  DF  HARDWARE FOR STORAGE ELEMENTS
53  DF  .~ Shields
54  DF  .~ Ground plane
55  DF  .~ Magnetic
56  DF  .~.~ Spacers
57  DF  .~.~ Keeper
58  DF  .~.~ Slot
59  DF  .~.~ Embedded conductor
60  DF  .~.~ Air gap
61  DF  .~.~ Hairpin conductor
62  DF  .~.~ Permanent magnet
63  DF  INTERCONNECTION ARRANGEMENTS
64  DF  .~ Optical
65  DF  .~ Ferroelectric
66  DF  .~ Magnetic
67  DF  .~.~ Plural diagonal
68  DF  .~.~ Tree
69  DF  .~.~ Crossover
70  DF  .~.~ Woven
71  DF  .~ Negative resistance
72  DF  .~ Transistors or diodes
73  DF  RECIRCULATION STORES
74  DF  .~ Magnetic
75  DF  .~ Stepwise
76  DF  .~ Delay lines
77  DF  .~ Plural paths
78  DF  PLURAL SHIFT REGISTER MEMORY DEVICES
80  DF  MAGNETIC SHIFT REGISTERS
81  DF  .~ Bidirectional
82  DF  .~ Two cells per bit
83  DF  .~ SiPo/PiSo
84  DF  .~ Core in transfer loop
85  DF  .~ Continuous
86  DF  .~.~ Plated wire
87  DF  .~ Thin film
88  DF  .~.~ Domain tip
89  DF  .~ Logic
90  DF  .~ Multiaperture cell
91  DF  .~.~ Ladder
92  DF  .~.~ With other type core
93  DF  .~ Including delay means
94  DF  READ ONLY SYSTEMS (I.E.. SEMIPERMANENT)
95  DF  .~ With override (i.e., latent images)
96  DF  .~ Fusible
97  DF  .~ Magnetic
98  DF  .~.~ Random core
99  DF  .~.~ Random wiring
100  DF  .~ Resistive
101  DF  .~ Inductive
102  DF  .~ Capacitative
103  DF  .~ Semiconductive
104  DF  .~.~ Transistors
105  DF  .~.~ Diodes
106  DF  RADIANT ENERGY
107  DF  .~ Chemical fluids
108  DF  .~ Liquid crystal
109  DF  .~ Photoconductive and ferroelectric
110  DF  .~ Electroluminescent and photoconductive
111  DF  .~ Electroluminescent
112  DF  .~ Photoconductive
113  DF  .~ Amorphous
114  DF  .~ Semiconductive
115  DF  .~.~ Diodes
116  DF  .~ Plasma
117  DF  .~ Ferroelectric
118  DF  .~ Electron beam
119  DF  .~ Color centers
120  DF  INFORMATION MASKING
121  DF  .~ Polarization
122  DF  .~.~ Magneto-optical
123  DF  .~ Bragg cells
124  DF  .~ Diffraction
125  DF  .~.~ Holograms
126  DF  .~ Thermoplastic
127  DF  .~ Transparency
128  DF  .~ Electron beams
129  DF  SYSTEMS USING PARTICULAR ELEMENT
130  DF  .~ Three-dimensional magnetic array
131  DF  .~ Two magnetic cells per bit
132  DF  .~ Different size cores
133  DF  .~ Cells of diverse coercivity
134  DF  .~ Continuous cells
135  DF  .~.~ Elongated or bar-shaped cell
136  DF  .~.~.~ Twisters
137  DF  .~.~.~ Tubular
138  DF  .~.~.~ Chain
139  DF  .~.~.~ Plated wire
140  DF  .~ Multiaperture cell
141  DF  .~.~ Aperture plate
142  DF  .~.~ Aperture with transverse axis
143  DF  .~.~.~ Biax
144  DF  .~.~ Same size apertures
145  DF  .~ Ferroelectric
146  DF  .~ Electrets
147  DF  .~ Persistent internal polarization (PIP)
148  DF  .~ Resistive
149  DF  .~ Capacitors
150  DF  .~.~ Inherent
151  DF  .~ Molecular or atomic
152  DF  .~.~ Nuclear induction or spin echo
153  DF  .~ Electrochemical
154  DF  .~ Flip-flop (electrical)
155  DF  .~.~ Plural emitter or collector
156  DF  .~.~ Complementary
157  DF  .~ Magnetostrictive or piezoelectric
158  DF  .~ Magnetoresistive
159  DF  .~ Negative resistance
160  DF  .~ Superconductive
161  DF  .~.~ Thin film
162  DF  .~.~ Josephson
163  DF  .~ Amorphous (electrical)
164  DF  .~ Electrical contacts
165  DF  .~.~ Coherer
166  DF  .~.~ Relay
167  DF  .~ Simulating biological cells
168  DF  .~ Ternary
169  DF  .~ Gunn effect
170  DF  .~ Hall effect
171  DF  .~ Magnetic thin film
172  DF  .~.~ Isotropic
173  DF  .~.~ Multiple magnetic storage layers
174  DF  .~ Semiconductive
175  DF  .~.~ Diodes
176  DF  .~.~ Silicon on sapphire (SOS)
177  DF  .~.~ Bioplar and FET
178  DF  .~.~ Ion implantation
179  DF  .~.~ Plural emitter or collector
180  DF  .~.~ Four layer devices
181  DF  .~.~ Complementary conductivity
182  DF  .~.~ Insulated gate devices
183  DF  .~.~.~ Charge coupled
184  DF  .~.~.~ Variable threshold
186  DF  .~.~ Single device per bit
187  DF  .~.~ Three devices per bit
188  DF  .~.~ Four or more devices per bit
189.01  DF  READ/WRITE CIRCUIT
189.02  DF  .~ Multiplexing
189.03  DF  .~ Plural use of terminal
189.04  DF  .~ Simultaneous operations (e.g., read/write)
189.05  DF  .~ Having particular data buffer or latch
189.06  DF  .~ Including signal clamping
189.07  DF  .~ Including signal comparison
189.08  DF  .~ Including specified plural element logic arrangement
189.09  DF  .~ Including reference or bias voltage generator
189.11  DF  .~ Including level shift or pull-up circuit
189.12  DF  .~ With shift register
190  DF  .~ For complementary information
191  DF  .~ Signals
192  DF  .~.~ Radio frequency
193  DF  .~.~ Strobe
194  DF  .~.~ Delay
195  DF  .~.~ Inhibit
196  DF  .~.~.~ Sense/inhibit
197  DF  .~.~ Microwave
198  DF  .~.~ Transmission
199  DF  .~.~ Coincident A.C. signal with pulse
200  DF  .~ Bad bit
201  DF  .~ Testing
202  DF  .~ Complementing/balancing
203  DF  .~ Precharge
204  DF  .~ Accelerating charge or discharge
205  DF  .~ Flip-flop used for sensing
206  DF  .~ Noise suppression
207  DF  .~.~ Differential sensing
208  DF  .~.~.~ Semiconductors
209  DF  .~.~.~ Magnetic
210  DF  .~.~.~.~ Reference or dummy element
211  DF  .~.~ Temperature compensation
212  DF  .~.~.~ Semiconductor
213  DF  .~.~.~ Magnetic
214  DF  .~.~ Particular wiring
215  DF  .~ Optical
216  DF  .~.~ Holographic
217  DF  .~ Electron beam
218  DF  .~ Erase
219  DF  .~ SiPo/PiSo
220  DF  .~ Parallel read/write
221  DF  .~ Serial read/write
222  DF  .~ Data refresh
223  DF  .~ Bridge
224  DF  .~ Eddy current
225  DF  .~ Minor loop
225.5  DF  .~ Including magnetic element
225.6  DF  .~ Having bipolar circuit element
225.7  DF  .~ Having fuse element
226  DF  POWERING
227  DF  .~ Conservation of power
228  DF  .~ Data preservation
229  DF  .~.~ Standby power
230.01  DF  ADDRESSING
230.02  DF  .~ Multiplexing
230.03  DF  .~ Plural blocks or banks
230.04  DF  .~.~ Alternate addressing (e.g., even/odd)
230.05  DF  .~ Multiple port access
230.06  DF  .~ Particular decoder or driver circuit
230.07  DF  .~.~ Including magnetic element
230.08  DF  .~ Including particular address buffer or latch circuit arrangement
230.09  DF  .~ Combined random and sequential addressing
231  DF  .~ Using selective matrix
232  DF  .~.~ Magnetic
233  DF  .~ Sync/clocking
233.5  DF  .~.~ Transition detection
234  DF  .~ Optical
235  DF  .~.~ Page memories
236  DF  .~ Counting
237  DF  .~ Electron beam
238  DF  .~ Cartesian memories
238.5  DF  .~ Byte or page addressing
239  DF  .~ Sequential
240  DF  .~.~ Using shift register
241  DF  .~.~ Detectors
242  DF  .~ Current steering
243  DF  .~.~ Diode
243.5  DF  .~ Including magnetic element
244  DF  MISCELLANEOUS