365 / | HD | STATIC INFORMATION STORAGE AND RETRIEVAL |
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129 | | SYSTEMS USING PARTICULAR ELEMENT {26} |
130 | DF | .~> Three-dimensional magnetic array |
131 | DF | .~> Two magnetic cells per bit |
132 | DF | .~> Different size cores |
133 | DF | .~> Cells of diverse coercivity |
134 | DF | .~> Continuous cells {1} |
140 | DF | .~> Multiaperture cell {3} |
145 | DF | .~> Ferroelectric |
146 | DF | .~> Electrets |
147 | DF | .~> Persistent internal polarization (PIP) |
148 | DF | .~> Resistive |
149 | DF | .~> Capacitors {1} |
151 | DF | .~> Molecular or atomic {1} |
153 | DF | .~> Electrochemical |
154 | DF | .~> Flip-flop (electrical) {2} |
157 | DF | .~> Magnetostrictive or piezoelectric |
158 | DF | .~> Magnetoresistive |
159 | DF | .~> Negative resistance |
160 | DF | .~> Superconductive {2} |
163 | DF | .~> Amorphous (electrical) |
164 | DF | .~> Electrical contacts {2} |
167 | DF | .~> Simulating biological cells |
168 | DF | .~> Ternary |
169 | DF | .~> Gunn effect |
170 | DF | .~> Hall effect |
171 | DF | .~> Magnetic thin film {2} |
174 | DF | .~> Semiconductive {11} |