Subject matter under 185.18 wherein a particular process or means is used in a floating gate device to set the threshold to a predetermined value during either programming or erasure.
SEE OR SEARCH CLASS
257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),
314, for substructure floating gate memory device having a variable threshold (e.g., by storage of charge in an insulator layer adjacent a channel).