US PATENT SUBCLASS 257 / 449
.~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide))

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
449.~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5}
450  DF  .~.~.~.~> With doping profile to adjust barrier height
451  DF  .~.~.~.~> Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor)
452  DF  .~.~.~.~> With edge protection, e.g., doped guard ring or mesa structure
453  DF  .~.~.~.~> With specified Schottky metallic layer {1}
457  DF  .~.~.~.~> With particular contact geometry (e.g., ring or grid)

DEFINITION

Classification: 257/449

Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)):

(under subclass 431) Subject matter wherein the device has a rectifying junction which is formed between a metal and a semiconductor material (i.e., a Schottky barrier).

(1) Note. The Schottky barrier may, for example, be transparent or contain indium or tin (e.g., SnO2, indium tin oxide).