US PATENT SUBCLASS 257 / 450
.~.~.~.~ With doping profile to adjust barrier height

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
449  DF  .~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5}
450.~.~.~.~ With doping profile to adjust barrier height

DEFINITION

Classification: 257/450

With doping profile to adjust barrier height:

(under subclass 449) Subject matter wherein the height of the Schottky barrier is changed by varying the concentration of the impurity dopant in the semiconductor portion of the active junction region of the device.