| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 414 | DF | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4} |
| 428 | DF | .~ Electromagnetic or particle radiation {2} |
| 431 |  | .~.~ Light {15} |
| 432 | DF | .~.~.~> With optical element |
| 433 | DF | .~.~.~> With housing or encapsulation {1} |
| 435 | DF | .~.~.~> With optical shield or mask means |
| 436 | DF | .~.~.~> With means for increasing light absorption (e.g., redirection of unabsorbed light) {1} |
| 438 | DF | .~.~.~> Avalanche junction |
| 439 | DF | .~.~.~> Containing dopant adapted for photoionization |
| 440 | DF | .~.~.~> With different sensor portions responsive to different wavelengths (e.g., color imager) |
| 441 | DF | .~.~.~> Narrow band gap semiconductor (<<1 eV) (e.g., PbSnTe) {1} |
| 443 | DF | .~.~.~> Matrix or array (e.g., single line arrays) {5} |
| 449 | DF | .~.~.~> Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5} |
| 458 | DF | .~.~.~> PIN detector, including combinations with non-light responsive active devices |
| 459 | DF | .~.~.~> With particular contact geometry (e.g., ring or grid, or bonding pad arrangement) |
| 460 | DF | .~.~.~> With backside illumination (e.g., with a thinned central area or non-absorbing substrate) |
| 461 | DF | .~.~.~> Light responsive pn junction {4} |
| 466 | DF | .~.~.~> External physical configuration of semiconductor (e.g., mesas, grooves) |