US PATENT SUBCLASS 257 / 439
.~.~.~ Containing dopant adapted for photoionization


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
439.~.~.~ Containing dopant adapted for photoionization


DEFINITION

Classification: 257/439

Containing dopant adapted for photoionization:

(under subclass 431) Subject matter wherein the junction region is provided with impurity dopant atoms which are only ionized to produce free carriers by the incident light.