US PATENT SUBCLASS 257 / 438
.~.~.~ Avalanche junction

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
438.~.~.~ Avalanche junction

DEFINITION

Classification: 257/438

Avalanche junction:

(under subclass 431) Subject matter wherein the device has a junction which is operated in the avalanche portion of its operating curve to utilize the avalanche multiplication of photocurrent by means of hole-electron pairs created by absorbed photons.

(1) Note. When the reverse bias voltage applied to the device approaches breakdown level, the holes or electrons collide with substrate atoms to produce an avalanche of hole-electron pairs.