257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
414 | DF | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4} |
428 | DF | .~ Electromagnetic or particle radiation {2} |
431 | DF | .~.~ Light {15} |
461 | .~.~.~ Light responsive pn junction {4} | |
462 | DF | .~.~.~.~> Phototransistor |
463 | DF | .~.~.~.~> With particular doping concentration |
464 | DF | .~.~.~.~> With particular layer thickness (e.g., layer less than light absorption depth) |
465 | DF | .~.~.~.~> Geometric configuration of junction (e.g., fingers) |