US PATENT SUBCLASS 257 / 461
.~.~.~ Light responsive pn junction


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
461.~.~.~ Light responsive pn junction {4}
462  DF  .~.~.~.~> Phototransistor
463  DF  .~.~.~.~> With particular doping concentration
464  DF  .~.~.~.~> With particular layer thickness (e.g., layer less than light absorption depth)
465  DF  .~.~.~.~> Geometric configuration of junction (e.g., fingers)


DEFINITION

Classification: 257/461

Light responsive pn junction:

(under subclass 431) Subject matter wherein the device has a junction between p-type and n-type material which responds to light incident upon it by generating a signal proportional thereto.