US PATENT SUBCLASS 257 / 464
.~.~.~.~ With particular layer thickness (e.g., layer less than light absorption depth)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
461  DF  .~.~.~ Light responsive pn junction {4}
464.~.~.~.~ With particular layer thickness (e.g., layer less than light absorption depth)

DEFINITION

Classification: 257/464

With particular layer thickness (e.g., layer less than light absorption depth):

(under subclass 461) Subject matter wherein the thickness of the junction region is of a specified thickness (e.g., less than the thickness in which light is absorbed).