US PATENT SUBCLASS 257 / 463
.~.~.~.~ With particular doping concentration

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
461  DF  .~.~.~ Light responsive pn junction {4}
463.~.~.~.~ With particular doping concentration

DEFINITION

Classification: 257/463

With particular doping concentration:

(under subclass 461) Subject matter wherein the pn junction has a particular impurity dopant concentration or spatial distribution.