US PATENT SUBCLASS 257 / 453
.~.~.~.~ With specified Schottky metallic layer


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
449  DF  .~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5}
453.~.~.~.~ With specified Schottky metallic layer {1}
454  DF  .~.~.~.~.~> Schottky metallic layer is a silicide {2}


DEFINITION

Classification: 257/453

With specified Schottky metallic layer:

(under subclass 449) Subject matter wherein the device includes a layer of metal which has a specified chemical composition.