| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
| 414 | DF | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4} |
| 428 | DF | .~ Electromagnetic or particle radiation {2} |
| 431 | DF | .~.~ Light {15} |
| 449 | DF | .~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5} |
| 453 | DF | .~.~.~.~ With specified Schottky metallic layer {1} |
| 454 | | .~.~.~.~.~ Schottky metallic layer is a silicide {2} |
| 455 | DF | .~.~.~.~.~.~> Silicide of Platinum group metal |
| 456 | DF | .~.~.~.~.~.~> Silicide of refractory metal |