US PATENT SUBCLASS 257 / 456
.~.~.~.~.~.~ Silicide of refractory metal

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
449  DF  .~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5}
453  DF  .~.~.~.~ With specified Schottky metallic layer {1}
454  DF  .~.~.~.~.~ Schottky metallic layer is a silicide {2}
456.~.~.~.~.~.~ Silicide of refractory metal

DEFINITION

Classification: 257/456

Silicide of refractory metal:

(under subclass 454) Subject matter wherein the Schottky layer comprises a silicide of the refractory metals (i.e., W, Ti, Ta, Hf, Zr, V, Nb, Mo, and Cr).