US PATENT SUBCLASS 257 / 451
.~.~.~.~ Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
449  DF  .~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5}
451.~.~.~.~ Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor)

DEFINITION

Classification: 257/451

Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor):

(under subclass 449) Subject matter wherein the device responds to light having lower energy than the energy difference between the bottom of the conduction band and the top of the valance band of the semiconductor material that forms a junction with the metal.

(1) Note. One way to achieve this result is to photoelectrically excite electrons from the metal adjacent the semiconductor into the semiconductor.