US PATENT SUBCLASS 257 / 452
.~.~.~.~ With edge protection, e.g., doped guard ring or mesa structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
449  DF  .~.~.~ Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) {5}
452.~.~.~.~ With edge protection, e.g., doped guard ring or mesa structure

DEFINITION

Classification: 257/452

With edge protection, e.g., doped guard ring or mesa structure:

(under subclass 449) Subject matter wherein means is provided to reduce electric field concentration or breakdown at edges of the metal and semiconductor.