US PATENT SUBCLASS 326 / 24
.~.~.~ Complementary FET's

Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

21  DF  SIGNAL SENSITIVITY OR TRANSMISSION INTEGRITY {5}
22  DF  .~ Input noise margin enhancement {1}
23  DF  .~.~ With field effect-transistor {2}
24.~.~.~ Complementary FET's

DEFINITION

Classification: 326/24

Complementary FET's:

(under subclass 23) Subject matter including at least a unit of two field-effect transistor elements connected in series with their gate terminals tied together, each having a channel of conductivity type opposite that of the other (e.g., p-channel vs. n-channel).