US PATENT SUBCLASS 257 / 67
.~.~ In combination with device formed in single crystal semiconductor material (e.g., stacked FETs)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66  DF  .~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
67.~.~ In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) {3}
68  DF  .~.~.~> Capacitor element in single crystal semiconductor (e.g., DRAM)
69  DF  .~.~.~> Field effect transistor in single crystal material, complememtary to that in non-single crystal, or recrystallized, material (e.g., CMOS)
70  DF  .~.~.~> Recrystallized semiconductor material

DEFINITION

Classification: 257/67

In combination with device formed in single crystal semiconductor material (e.g., stacked FETs):

(under subclass 66) Subject matter wherein the field effect device is combined with an active or passive solid-state device located in a single crystal semiconductor material (i.e., one in which atoms are arranged in a regular three dimensional array).